JPH032340B2 - - Google Patents
Info
- Publication number
- JPH032340B2 JPH032340B2 JP56178193A JP17819381A JPH032340B2 JP H032340 B2 JPH032340 B2 JP H032340B2 JP 56178193 A JP56178193 A JP 56178193A JP 17819381 A JP17819381 A JP 17819381A JP H032340 B2 JPH032340 B2 JP H032340B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- gate
- gate electrode
- electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
- H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
- H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178193A JPS5879768A (ja) | 1981-11-05 | 1981-11-05 | ショットキゲート電界効果トランジスタの製造方法 |
| EP82300499A EP0057605B1 (en) | 1981-01-29 | 1982-01-29 | A schottky-barrier gate field effect transistor and a process for the production of the same |
| DE8282300499T DE3273695D1 (en) | 1981-01-29 | 1982-01-29 | A schottky-barrier gate field effect transistor and a process for the production of the same |
| US06/361,070 US4601095A (en) | 1981-10-27 | 1982-03-23 | Process for fabricating a Schottky-barrier gate field effect transistor |
| CA000401059A CA1184320A (en) | 1981-10-27 | 1982-04-15 | Schottky-barrier gate field effect transistor and a process for the production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178193A JPS5879768A (ja) | 1981-11-05 | 1981-11-05 | ショットキゲート電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5879768A JPS5879768A (ja) | 1983-05-13 |
| JPH032340B2 true JPH032340B2 (en]) | 1991-01-14 |
Family
ID=16044212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56178193A Granted JPS5879768A (ja) | 1981-01-29 | 1981-11-05 | ショットキゲート電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879768A (en]) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643768A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
-
1981
- 1981-11-05 JP JP56178193A patent/JPS5879768A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5879768A (ja) | 1983-05-13 |
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